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publication number 21257 revision d amendment 6 issue date march 3, 2009 am29f200b known good die am29f200b known good die cover sheet data sheet (retired product) this product has been retired and is not recommended for des igns. please contact your spansion representative for alternates. availability of this document is retained for reference and historical purposes only. the following document contains info rmation on spansion memory products. continuity of specifications there is no change to this data sheet as a result of offering the device as a spansi on product. any changes that have been made are the result of normal data sheet improvem ent and are noted in the document revision summary. for more information please contact your local sales office for additional information about spansion memory solutions.
2 am29f200b known good die 21257_d6 march 3, 2009 data sheet (retired product) this page left intentionally blank.
supplement publication# 21257 rev: d amendment/ 6 issue date: march 3, 2009 am29f200b known good die 2 megabit (256 k x 8-bit/128 k x 16-bit) cmos 5.0 volt-only, sectored flash memory?die revision 1 this product has been retired and is not recommended fo r designs. please contact your spansion representative for alternates. availability of this document is re tained for reference and historical purposes only. distinctive characteristics 5.0 v 10% for read and write operations ? minimizes system level power requirements manufactured on 0.32 m process technology ? compatible with 0.5 m am29f200a device high performance ? 70, 90, or 120 ns access time low power consumption ? 20 ma typical active read current (byte mode) ? 28 ma typical active read current for (word mode) ? 30 ma typical program/erase current ? 1 a typical standby current sector erase architecture ? one 16 kbyte, two 8 kbyte, one 32 kbyte, and three 64 kbyte sectors (byte mode) ? one 8 kword, two 4 kword, one 16 kword, and three 32 kword sectors (word mode) ? supports full chip erase ? sector protection features: a hardware method of locking a sector to prevent any program or erase operations within that sector sectors can be locked via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors top or bottom boot block configurations available embedded algorithms ? embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors ? embedded program algorithm automatically writes and verifies data at specified addresses minimum 1,000,000 write/erase cycles guaranteed compatible with jedec standards ? pinout and software compatible with single-power-supply flash ? superior inadvertent write protection data# polling and toggle bit ? detects program or erase cycle completion ready/busy# output (ry/by#) ? hardware method for detection of program or erase cycle completion erase suspend/resume ? supports reading data from a sector not being erased hardware reset# pin ? resets internal state machine to the reading array data 20-year data re tention at 125 c tested to datasheet specifications at temperature ? contact amd for higher temperature range devices quality and reliability levels equivalent to standard packaged components shipped in waffle pack, surftape, and unsawn wafer 500 m die/wafer thickness
4 am29f200b known good die supplement general description the am29f200b in known good die (kgd) form is a 2 mbit, 5.0 volt-only flash memory. amd defines kgd as standard product in die form, tested for functionality and speed. amd kgd products have the same reli- ability and quality as amd pr oducts in packaged form. am29f200b features the am29f200b is organized as 262,144 bytes of 8 bits each or 131,072 words of 16 bits each. the 8-bit data appears on dq0-dq7; the 16-bit data appears on dq0-dq15. this device is designed to be programmed in-system with the standard system 5.0 volt v cc supply. a 12.0 volt v pp is not required for program or erase operations. the standard am29f200b in kgd form offers an access time of 70, 90, or 120 ns, allowing high-speed microprocessors to operate without wait states. to eliminate bus contention the device has separate chip enable (ce#), write enable (we#), and output enable (oe#) controls. the device requires only a single 5.0 volt power sup- ply for both read and write functions. internally gener- ated and regulated voltages are provided for the program and erase operations. the device is entirely command set compatible with the jedec single-power-supply flash standard . com- mands are written to the command register using stan- dard microprocessor write timings. register contents serve as input to an internal state-machine that con- trols the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithm?an internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. device erasure occurs by executing the erase com- mand sequence. this initiates the embedded erase algorithm?an internal algorithm that automatically preprograms the array (if it is not already pro- grammed) before executing the erase operation. dur- ing erase, the device automatically times the erase pulse widths and verifies proper cell margin. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, or by reading the dq 7 (data# polling) and dq6/ dq2 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write opera- tions during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of the sectors of mem- ory. this can be achieved via programming equipment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset # pin may be tied to the system reset circuitry. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the system can place the device into the standby mode . power consumption is greatly reduced in this mode. amd?s flash technology combines years of flash mem- ory manufacturing experience to produce the highest lev- els of quality, reliability and cost effectiveness. the device electrically erases all bits within a sector simulta- neously via fowler-nordheim tunneling. the data is programmed using hot electron injection. electrical s pecifications refer to the am29f200b data sheet, publication number 21526, for full electrical specifications on the am29f200b. product selector guide family part number am29f200b kgd speed option (v cc = 5.0 v 10%) -75 (v cc = 5.0 v 5%) -90 -120 max access time, ns (t acc ) 70 90 120 max ce# access time, ns (t ce ) 70 90 120 max oe# access time, ns (t oe )303550
am29f200b known good die 5 supplement die photograph die pad locations 1 2 3 4 5 6 7 8 9 10 11 12 1314 15 16 17 18 19 20 21 22 23 24 25 28 29 30 34 35 37 38 39 40 41 31 32 33 2627 42 36 amd logo location
6 am29f200b known good die supplement pad description note: the coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. pad signal pad center (mils) pad center (millimeters) xyxy 1v cc 0.00 0.00 0.0000 0.0000 2 dq4 ?6.80 0.00 ?0.1727 0.0000 3 dq12 ?12.80 0.00 ?0.3251 0.0000 4 dq5 ?18.60 0.00 ?0.4724 0.0000 5 dq13 ?24.50 0.00 ?0.6223 0.0000 6 dq6 ?30.30 0.00 ?0.7696 0.0000 7 dq14 ?36.30 0.00 ?0.9220 0.0000 8 dq7 ?42.10 0.00 ?1.0693 0.0000 9 dq15/a-1 ?48.00 0.00 ?1.2192 0.0000 10 v ss ?55.70 1.40 ?1.4148 0.0356 11 byte# ?57.50 ?6.50 ?1.4605 ?0.1651 12 a16 ?57.50 ?18.00 ?1.4605 ?0.4572 13 a15 ?57.10 ?124.90 ?1.4503 ?3.1725 14 a14 ?51.30 ?124.90 ?1.3030 ?3.1725 15 a13 ?45.90 ?124.90 ?1.1659 ?3.1725 16 a12 ?40.00 ?124.90 ?1.0160 ?3.1725 17 a11 ?34.60 ?124.90 ?0.8788 ?3.1725 18 a10 ?28.80 ?124.90 ?0.7315 ?3.1725 19 a9 ?23.30 ?124.60 ?0.5918 ?3.1648 20 a8 ?17.40 ?124.90 ?0.4420 ?3.1725 21 we# ?12.00 ?124.90 ?0.3048 ?3.1725 22 reset# ?2.40 ?128 .60 ?0.0610 ?3.2664 23 ry/by# 9.50 ?128.60 0.2413 ?3.2664 24 a7 30.30 ?124.90 0.7696 ?3.1725 25 a6 35.80 ?124.90 0.9093 ?3.1725 26 a5 41.60 ?124.90 1.0566 ?3.1725 27 a4 47.00 ?124.90 1.1938 ?3.1725 28 a3 52.90 ?124.90 1.3437 ?3.1725 29 a2 58.30 ?124.90 1.4808 ?3.1725 30 a1 64.10 ?124.90 1.6281 ?3.1725 31 a0 64.50 ?18.00 1.6383 ?0.4572 32 ce# 64.50 ?6.50 1.6383 ?0.1651 33 v ss 64.50 3.80 1.6383 0.0965 34 oe# 55.00 2.30 1.3970 0.0584 35 dq0 47.40 0.00 1.2040 0.0000 36 dq8 41.50 0.00 1.0541 0.0000 37 dq1 35.60 0.00 0.9042 0.0000 38 dq9 29.70 0.00 0.7544 0.0000 39 dq2 23.90 0.00 0.6071 0.0000 40 dq10 18.00 0.00 0.4572 0.0000 41 dq3 12.10 0.00 0.3073 0.0000 42 dq11 6.20 0.00 0.1575 0.0000
am29f200b known good die 7 supplement ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the following: valid combinations valid combinations list configurations planned to be suppor ted in volume for this device. consult the local amd sales office to confirm availability of specific valid combinations and to check on newly released combinations. am29f200b t -75 dp c 1 die revision this number refers to the specific amd manufacturing process and product technology reflected in this document. it is entered in the revision field of amd standard product nomenclature. temperature range c = commercial (0c to +70c) i = industrial (?40 c to +85 c) e = extended (?55 c to +125 c) contact amd for higher temperature range devices. package type and minimum order quantity dp = waffle pack 245 die per 5 tray stack dt = surftape? (tape and reel) 2500 per 7-inch reel speed option see product selector guide and valid combinations boot code sector architecture t = top sector b = bottom sector device number/description am29f200b known good die 2 megabit (256 k x 8-bit/128 k x 16-bit ) cmos flash memory?die revision 1 5.0 volt-only program and erase valid combinations am29f200bt-75, am29f200bb-75 (70 ns, v cc = 5.0 v 5%) dpc 1, dpi 1, dpe 1, dtc 1, dti 1, dte 1, am29f200bt-90, am29f200bb-90 am29f200bt-120, am29f200bb-120
8 am29f200b known good die supplement packaging information surftape packaging waffle pack packaging direction of feed orientation relative to leading edge of tape and reel amd logo location 12 mm orientation relative to top left corner of waffle pack cavity plate amd logo location
am29f200b known good die 9 supplement product test flow figure 1 provides an overview of amd?s known good die test flow. for more detaile d information, refer to the am29f200b product qualification database supple- ment for kgd. amd implements quality assurance pro- cedures throughout the product test flow. in addition, an off-line quality monitoring program (qmp) further guarantees amd quality standards are met on known good die products. these qa procedures also allow amd to produce kgd products without requiring or implementing burn-in. figure 1. amd kgd product test flow wafer sort 1 bake 24 hours at 250 c wafer sort 2 wafer sort 3 hot temperature packaging for shipment shipment dc parameters functionality programmability erasability data retention dc parameters functionality programmability erasability dc parameters functionality programmability erasability speed incoming inspection wafer saw die separation 100% visual inspection die pack
10 am29f200b known good die supplement physical specifications die dimensions . . . . . . . . . . . . . . 135 mils x 150 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.43 mm x 3.81 mm die thickness. . . . . . . . . . . . . . . . . . . . . . . . 19.7 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 m bond pad size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 m x 115.9 m pad area free of passivation . . . . . . . . . .13.99 mils 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 m 2 pads per die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 bond pad metalization . . . . . . . . . . . . . . . . . . . . al/cu die backside . . . . . . . . . . . . . . . . . . . . . . . . no metal, may be grounded (optional) passivation . . . . . . . . . . . . . . . . . . nitride/sog/nitride dc operating conditions v cc (supply voltage) . . . . . . . . . . . . . . . 4.5 v to 5.5 v junction temperature under bias: commercial, industrial, and extended temperature range . . . . .t j (max) = 130 c operating temperature commercial . . . . . . . . . . . . . . . . . . . 0 c to +70 c industrial . . . . . . . . . . . . . . . . . . . ?40 c to +85 c extended . . . . . . . . . . . . . . . . . . ?55 c to +125 c contact amd for higher temperature range devices. manufacturing information manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . fasl test . . . . . . . . . . . . . . . . . . . . . . sunnyvale, ca, usa, . . . . . . . . . . . . . . . . . . . . . . . . .and penang, malaysia manufacturing id (top boot) . . . . . . . . . . . . 98480ak (bottom boot) . . . . . . . .98480abk preparation for shipment . . . . . . . . penang, malaysia fabrication process . . . . . . . . . . . . . . . . . . . . cs39s die revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 special handling instructions processing do not expose kgd products to ultraviolet light or process them at temperatures greater than 250 c. failure to adhere to these handling instructions will result in irreparable damage to the devices. for best yield, amd recommends assembly in a class 10k clean room with 30% to 60% relative humidity. storage store at a maximum temperature of 30 c in a nitrogen- purged cabinet or vacuum-sealed bag. observe all standard esd handling procedures.
am29f200b known good die 11 supplement terms and conditions of sale for amd non-volatile memory die all transactions relating to unpackaged die or unpack- aged wafer(s) under this agreement shall be subject to amd?s standard terms and conditions of sale, or any revisions thereof, which revisions amd reserves the right to make at any time and from time to time. in the event of conflict between the provisions of amd?s stan- dard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. amd warrants unpackaged die or unpackaged wafer(s) of its manufacture (?known good die,? ?die,? or wafer(s)) against defective materials or workman- ship for a period of one (1) year from date of shipment. this warranty does not extend beyond the first pur- chaser of said die or wafer(s). buyer assumes full responsibility to ensure co mpliance with the appro- priate handling, assembly and processing of known good die or wafer(s) (including but not limited to proper die preparation, die attach, backgrinding, wire bonding and related assembly and test activities), and compliance with all gu idelines set forth in amd?s spec- ifications for known good die or wafer(s), and amd assumes no responsibility for environmental effects on known good die or wafer(s) or for any activity of buyer or a third party that damages the die or wafer(s) due to improper use, abuse, negligence, improper installation, improper backgrinding, accident, loss, damage in transit, or unauthorized repair or alteration by a person or entity other than amd (?warranty exclusions?). the liability of amd under this warranty is limited, at amd's option, solely to repair the die or wafer(s), to send replacement die or wafer(s), or to make an appropriate credit adjustment or refund in an amount not to exceed the original purchase price actually paid for the die or wafer(s) returned to amd, provided that: (a) amd is promptly notified by buyer in writing during the applicable warranty period of any defect or noncon- formity in the known good die or wafer(s); (b) buyer obtains authorization from amd to return the defective die or wafer(s); (c) the defective die or wafer(s) is returned to amd by buyer in accordance with amd?s shipping instructions set forth below; and (d) buyer shows to amd?s satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the above-referenced warranty exclusions. buyer shall ship such defect ive die or wafer(s) to amd via amd?s carrier, collect. risk of loss will transfer to amd when the defective die or wafer(s) is provided to amd?s carrier. if buyer fails to adhere to these warranty returns guidelines, buyer sh all assume all risk of loss and shall pay for all freight to amd's specified location. the aforementioned provisions do not extend the orig- inal warranty period of any known good die or wafer(s) that has either been repaired or replaced by amd. this warranty is expressed in lieu of all other warranties, expressed or implied, including the implied warranty of fitness for a particular purpose, the implied warranty of merchantability and of all other obligations or liabilities on amd's part, and it neither assumes nor autho- rizes any other person to assume for amd any other liabilities. the foregoing constitutes the buyer's sole and exclu- sive remedy for the furnishing of defec- tive or non conforming known good dieor wafer(s) and amd shall not in any event be liable for increased manufac- turing costs, downtime costs, damages relating to buyer?s procurement of sub- stitute die or wafer(s) (i.e., ?cost of cover?), loss of profits, revenues or goodwill, loss of use of or damage to any associated equipment, or any other indirect, incidental, special or conse- quential damages by reason of the fact that such known good die or wafer(s) shall have been determined to be defec- tive or non conforming. buyer agrees that it will ma ke no warranty representa- tions to its customers which exceed those given by amd to buyer unless and until buyer shall agree to indemnify amd in writing for any claims which exceed amd's warranty.
12 am29f200b known good die supplement revision summary revision a (1997) initial release. revision b (december 1997) formatted for 1998 flash data book. revision c (november 1998) global formatted to match current template. modified am29f200a data sheet for cs39s process technology. terms and conditions replaced warranty with new version. revision d (december 1998) global added -75 speed option. ordering information changed gel-pak quantity to 486. corrected surftape reel size to 7 inches. packaging information added section. moved orientation information from die photograph section into this section. revision d+1 (june 14, 1999) physical specifications corrected bond pad dimensions and deleted si from the bond pad metaliz ation specification. revision d+2 (july 12, 1999) global the device is now available in the high temperature range (?55 c to +140 c). t j (max) for this range is +145 c. revision d+3 (november 17, 1999) global replaced references to high temperature ratings with a note to contact amd for such devices. revision d+4 (june 27, 2001) manufacturing information added penang, malaysia as a test facility (acn2016). revision d+5 (july 27, 2007) ordering information removed package type options dg and dw packaging information removed all references to gel-pak revision d6 (march 3, 2009) global added obsolescence information. colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limitation, ordinary industrial use, genera l office use, personal use, and household use, but are not designed, developed and m anufactured as contemplated (1) for any use that includes fatal risks or dangers t hat, unless extremely high safety is secured, could have a s erious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic contro l, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intole rable (i.e., submersible repeater and artifi cial satellite). please note that spansion will not be liable to you and/or any third party for any claims or damages arising in connection with abo ve-mentioned uses of the products. any semic onductor devices have an inherent chance of failure. you must protect agains t injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. if any products described in this document r epresent goods or technologies s ubject to certain restriction s on export under the foreign exchange and foreign trade law of japan, the us export ad ministration regulations or the applicable laws of any oth er country, the prior authorization by the respective government entity will be required for export of those products. trademarks and notice the contents of this document are subjec t to change without notice. this document ma y contain information on a spansion product under development by spansion. spansion reserves the right to change or discontinue work on any product without notice. the informati on in this document is provided as is without warran ty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. spansion assume s no liability for any damages of any kind arising out of the use of the information in this document. copyright ? 1997?2005 advanced micro devices, inc. all rights reserv ed. amd, the amd logo, and combinations thereof are registe red trademarks of advanced micro devices, in c. product names used in this publication ar e for identification purposes only and may be trademarks of their respective companies. copyright ? 2006?2009 spansion inc. all rights reserved. spansion ? , the spansion logo, mirrorbit ? , mirrorbit ? eclipse ? , ornand ? , ornand2 ? , hd-sim ? , ecoram ? and combinations thereof, are trademarks of spansi on llc in the us and other countries. other names used are for informational purposes only and ma y be trademarks of their respective owners.

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